JPH0420264B2 - - Google Patents
Info
- Publication number
- JPH0420264B2 JPH0420264B2 JP58236509A JP23650983A JPH0420264B2 JP H0420264 B2 JPH0420264 B2 JP H0420264B2 JP 58236509 A JP58236509 A JP 58236509A JP 23650983 A JP23650983 A JP 23650983A JP H0420264 B2 JPH0420264 B2 JP H0420264B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- semiconductor device
- emitter
- semiconductor
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 84
- 238000005265 energy consumption Methods 0.000 claims description 18
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000006880 cross-coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
- H10D89/105—Integrated device layouts adapted for thermal considerations
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8204878A NL8204878A (nl) | 1982-12-17 | 1982-12-17 | Halfgeleiderinrichting. |
| NL8204878 | 1982-12-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59117263A JPS59117263A (ja) | 1984-07-06 |
| JPH0420264B2 true JPH0420264B2 (en]) | 1992-04-02 |
Family
ID=19840761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58236509A Granted JPS59117263A (ja) | 1982-12-17 | 1983-12-16 | 半導体装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4642668A (en]) |
| JP (1) | JPS59117263A (en]) |
| CA (1) | CA1204521A (en]) |
| DE (1) | DE3343632C2 (en]) |
| FR (1) | FR2538168B1 (en]) |
| GB (1) | GB2133619B (en]) |
| IT (1) | IT1172446B (en]) |
| NL (1) | NL8204878A (en]) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1215230B (it) * | 1985-01-08 | 1990-01-31 | Ates Componenti Elettron | Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria |
| DE3802821A1 (de) * | 1988-01-30 | 1989-08-03 | Bosch Gmbh Robert | Leistungstransistor |
| DE3802767A1 (de) * | 1988-01-30 | 1989-08-10 | Bosch Gmbh Robert | Elektronisches geraet |
| EP0560123A3 (en) * | 1992-03-12 | 1994-05-25 | Siemens Ag | Power transistor with multiple finger contacts |
| US6611172B1 (en) * | 2001-06-25 | 2003-08-26 | Sirenza Microdevices, Inc. | Thermally distributed darlington amplifier |
| US6703895B1 (en) * | 2002-09-26 | 2004-03-09 | Motorola, Inc. | Semiconductor component and method of operating same |
| US10403621B2 (en) | 2014-10-29 | 2019-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit layout, layout method and system for implementing the method |
| JP7725873B2 (ja) * | 2021-05-31 | 2025-08-20 | セイコーエプソン株式会社 | 集積回路装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3567506A (en) * | 1968-03-22 | 1971-03-02 | Hughes Aircraft Co | Method for providing a planar transistor with heat-dissipating top base and emitter contacts |
| US3896486A (en) * | 1968-05-06 | 1975-07-22 | Rca Corp | Power transistor having good thermal fatigue capabilities |
| GB1288384A (en]) * | 1969-01-31 | 1972-09-06 | ||
| US3667064A (en) * | 1969-05-19 | 1972-05-30 | Massachusetts Inst Technology | Power semiconductor device with negative thermal feedback |
| US3704398A (en) * | 1970-02-14 | 1972-11-28 | Nippon Electric Co | Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures |
| US3995304A (en) * | 1972-01-10 | 1976-11-30 | Teledyne, Inc. | D/A bit switch |
| US3868720A (en) * | 1973-12-17 | 1975-02-25 | Westinghouse Electric Corp | High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance |
| NL7405237A (nl) * | 1974-04-18 | 1975-10-21 | Philips Nv | Parallelschakelen van halfgeleidersystemen. |
| US3952259A (en) * | 1975-04-28 | 1976-04-20 | Rockwell International Corporation | Gain control apparatus |
| NL181612C (nl) * | 1977-05-25 | 1988-03-16 | Philips Nv | Halfgeleiderinrichting. |
| JPS5422784A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Semiconductor integrated circuit device for output |
| US4136354A (en) * | 1977-09-15 | 1979-01-23 | National Semiconductor Corporation | Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level |
| US4161740A (en) * | 1977-11-07 | 1979-07-17 | Microwave Semiconductor Corp. | High frequency power transistor having reduced interconnection inductance and thermal resistance |
-
1982
- 1982-12-17 NL NL8204878A patent/NL8204878A/nl not_active Application Discontinuation
-
1983
- 1983-12-02 DE DE3343632A patent/DE3343632C2/de not_active Expired - Lifetime
- 1983-12-13 GB GB08333233A patent/GB2133619B/en not_active Expired
- 1983-12-14 FR FR8320046A patent/FR2538168B1/fr not_active Expired
- 1983-12-14 IT IT24175/83A patent/IT1172446B/it active
- 1983-12-15 CA CA000443371A patent/CA1204521A/en not_active Expired
- 1983-12-16 JP JP58236509A patent/JPS59117263A/ja active Granted
-
1985
- 1985-12-05 US US06/805,579 patent/US4642668A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| NL8204878A (nl) | 1984-07-16 |
| US4642668A (en) | 1987-02-10 |
| FR2538168A1 (fr) | 1984-06-22 |
| GB2133619B (en) | 1986-08-20 |
| GB2133619A (en) | 1984-07-25 |
| JPS59117263A (ja) | 1984-07-06 |
| FR2538168B1 (fr) | 1988-10-14 |
| IT8324175A0 (it) | 1983-12-14 |
| IT8324175A1 (it) | 1985-06-14 |
| GB8333233D0 (en) | 1984-01-18 |
| IT1172446B (it) | 1987-06-18 |
| CA1204521A (en) | 1986-05-13 |
| DE3343632C2 (de) | 1993-09-30 |
| DE3343632A1 (de) | 1984-06-20 |
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